| ‘lllvVISHAYQ7 www.vishay.com IF - Instantaneous Forward current (A) 94014701 VFM - Forward Voltage Drop (V)Fig. 1 — Maximum Forward voltage Drop Characteristics 100 2 10 _E,‘E Q’ 1t3O 0 1OIn._ gQ, 0.01I: _= 0.001 0.0001 94614702 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage 100 CT - Junction Capacitance (pF) 0 10 20 30 40 50 04014703 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Note(1) Formula used: TC : TJ ? (Pd + PdREV) X Rmdc;Pd : Forward power loss : IHAV) X VFM at (IF(AV}/D) (see fig. 6); PdHEV : Inverse power loss : VR1 x IR (1 — D); In at VH1 : 80 % rated VR vs-1 N581 9, vs-1 N581 9-M3 Vishay Semiconductors 160 140 120 100 80 Square wave (D : 0.50)Rated VR arplied 80 see note (1 Allowable Lead Temperature (ac) 400 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 94614704 IFW) - Average Forward Current (A) Fig. 4 ? Typical Allowable Lead Temperature vs.Average FonNard Current E (II(IIo _I\-0)BoIa.0)m(VL0)>< 0 0.5 1 1.5 94614705 Average Forward current - IF(Av) (A) Fig. 5 - Forward Power Loss Characteristics 1000 IFSM - Non-Repetitive surge current (A) 100 Al Any Rated Load ConditionAnd With rated VRRM AppliedFollowing Surge 1010 100 1000 10 000 94514706 Ip — square wave Pulse Duration (us) Fig. 6 - Typical Non-Repetitive Surge Current Revision: 21-Sep-11 Document Number: 94614 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |